Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2012
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| Online Access: | https://hdl.handle.net/10356/94656 http://hdl.handle.net/10220/8168 |
| _version_ | 1811692916795506688 |
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| author | Made, Riko I. Gan, Chee Lip Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Made, Riko I. Gan, Chee Lip Tan, Chuan Seng |
| author_sort | Made, Riko I. |
| collection | NTU |
| description | Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this paper the mentioned phenomena is modeled and simulated. Electromigration induced contact resistance reduction of bonded interconnects may provide a method for post-bonding bond property improvement for 3DICs |
| first_indexed | 2024-10-01T06:43:23Z |
| format | Journal Article |
| id | ntu-10356/94656 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:43:23Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/946562020-03-07T13:57:28Z Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface Made, Riko I. Gan, Chee Lip Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this paper the mentioned phenomena is modeled and simulated. Electromigration induced contact resistance reduction of bonded interconnects may provide a method for post-bonding bond property improvement for 3DICs Published version 2012-05-29T06:58:07Z 2019-12-06T18:59:44Z 2012-05-29T06:58:07Z 2019-12-06T18:59:44Z 2010 2010 Journal Article Made, R. I., Gan, C. L. & Tan, C. S. (2010). Modeling of Electromigration Induced Contact Resistance Reduction of Cu-Cu Bonded Interface. ECS Transactions, 33(12), 23-34. https://hdl.handle.net/10356/94656 http://hdl.handle.net/10220/8168 10.1149/1.3501031 157116 en ECS transactions ©2010 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: [DOI: http://dx.doi.org/10.1149/1.3501031 ]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 12 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Made, Riko I. Gan, Chee Lip Tan, Chuan Seng Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title | Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title_full | Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title_fullStr | Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title_full_unstemmed | Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title_short | Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface |
| title_sort | modeling of electromigration induced contact resistance reduction of cu cu bonded interface |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/94656 http://hdl.handle.net/10220/8168 |
| work_keys_str_mv | AT maderikoi modelingofelectromigrationinducedcontactresistancereductionofcucubondedinterface AT gancheelip modelingofelectromigrationinducedcontactresistancereductionofcucubondedinterface AT tanchuanseng modelingofelectromigrationinducedcontactresistancereductionofcucubondedinterface |