Silicide formation from laser thermal processing of Ti/Co bilayers
A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is monocrysta...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/94699 http://hdl.handle.net/10220/8094 |
| _version_ | 1826124327527907328 |
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| author | Chow, F. L. Pey, Kin Leong Lee, Pooi See Tung, Chih Hang Wang, X. C. Lim, G. C. Chong, Y. F. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Chow, F. L. Pey, Kin Leong Lee, Pooi See Tung, Chih Hang Wang, X. C. Lim, G. C. Chong, Y. F. |
| author_sort | Chow, F. L. |
| collection | NTU |
| description | A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after
pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is
monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The
constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The
incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium
impurity. |
| first_indexed | 2024-10-01T06:18:50Z |
| format | Journal Article |
| id | ntu-10356/94699 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:18:50Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/946992023-07-14T15:51:55Z Silicide formation from laser thermal processing of Ti/Co bilayers Chow, F. L. Pey, Kin Leong Lee, Pooi See Tung, Chih Hang Wang, X. C. Lim, G. C. Chong, Y. F. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm2. The highly textured CoTi silicide is monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium impurity. Published version 2012-05-18T07:00:45Z 2019-12-06T19:00:36Z 2012-05-18T07:00:45Z 2019-12-06T19:00:36Z 2004 2004 Journal Article Chow, F. L., Pey, K. L., Lee, P. S., Tung, C. H., Wang, X. C., Lim, G. C., et al. (2004). Silicide formation from laser thermal processing of Ti/Co bilayers. Electrochemical and Solid-State Letters, 7(10), G213-G215. https://hdl.handle.net/10356/94699 http://hdl.handle.net/10220/8094 10.1149/1.1788612 en Electrochemical and solid-state letters © 2004 The Electrochemical Society. This paper was published in Electrochemical and Solid-State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: http://dx.doi.org/10.1149/1.1788612. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Chow, F. L. Pey, Kin Leong Lee, Pooi See Tung, Chih Hang Wang, X. C. Lim, G. C. Chong, Y. F. Silicide formation from laser thermal processing of Ti/Co bilayers |
| title | Silicide formation from laser thermal processing of Ti/Co bilayers |
| title_full | Silicide formation from laser thermal processing of Ti/Co bilayers |
| title_fullStr | Silicide formation from laser thermal processing of Ti/Co bilayers |
| title_full_unstemmed | Silicide formation from laser thermal processing of Ti/Co bilayers |
| title_short | Silicide formation from laser thermal processing of Ti/Co bilayers |
| title_sort | silicide formation from laser thermal processing of ti co bilayers |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/94699 http://hdl.handle.net/10220/8094 |
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