Intrinsic domain-wall resistivity in half-metallic manganite thin films
Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetore...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/94709 http://hdl.handle.net/10220/9175 |
| _version_ | 1811695117662158848 |
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| author | Bakaul, Saidur Rahman Wu, Tom Hu, W. Kimura, T. |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Bakaul, Saidur Rahman Wu, Tom Hu, W. Kimura, T. |
| author_sort | Bakaul, Saidur Rahman |
| collection | NTU |
| description | Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La0.7Sr0.3MnO3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La0.7Sr0.3MnO3 to be 1.9×10−15 Ω·m2. |
| first_indexed | 2024-10-01T07:18:22Z |
| format | Journal Article |
| id | ntu-10356/94709 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:18:22Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/947092023-02-28T19:34:48Z Intrinsic domain-wall resistivity in half-metallic manganite thin films Bakaul, Saidur Rahman Wu, Tom Hu, W. Kimura, T. School of Physical and Mathematical Sciences Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La0.7Sr0.3MnO3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La0.7Sr0.3MnO3 to be 1.9×10−15 Ω·m2. Published version 2013-02-20T01:51:52Z 2019-12-06T19:00:51Z 2013-02-20T01:51:52Z 2019-12-06T19:00:51Z 2012 2012 Journal Article Bakaul, S. R., Hu, W., Wu, T., & Kimura, T. (2012). Intrinsic domain-wall resistivity in half-metallic manganite thin films. Physical Review B, 86(18). https://hdl.handle.net/10356/94709 http://hdl.handle.net/10220/9175 10.1103/PhysRevB.86.184404 en Physical review B © 2012 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevB.86.184404]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Bakaul, Saidur Rahman Wu, Tom Hu, W. Kimura, T. Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title | Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title_full | Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title_fullStr | Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title_full_unstemmed | Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title_short | Intrinsic domain-wall resistivity in half-metallic manganite thin films |
| title_sort | intrinsic domain wall resistivity in half metallic manganite thin films |
| url | https://hdl.handle.net/10356/94709 http://hdl.handle.net/10220/9175 |
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