On the morphological changes of Ni- and Ni(Pt)-silicides
The issue of agglomeration and layer inversion has remained critical because conductivity of thin silicide films is sensitive to the degradation of the film morphology. The purpose of this work is to study the morphology degradation that...
Main Authors: | Mangelinck, D., Osipowicz, T., Lee, Pooi See, Pey, Kin Leong, Chi, Dong Zhi |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/95016 http://hdl.handle.net/10220/8103 |
Similar Items
-
Characterization of the junction leakage of Ti-capped Ni-silicided junctions
by: Lee, Pooi See, et al.
Published: (2013) -
Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
by: Setiawan, Y., et al.
Published: (2012) -
Improved NiSi salicide process using presilicide N2+ implant for MOSFETs
by: Wee, A. T. S., et al.
Published: (2012) -
Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder
by: Kumar, Aditya, et al.
Published: (2013) -
Development of metal silicides for deep submicron polycrystalline silicon gate
by: Pang, Chong Hau
Published: (2008)