Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic che...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/95231 http://hdl.handle.net/10220/9334 http://www.nanoscalereslett.com/content/7/1/99 |
| _version_ | 1811683551550111744 |
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| author | Dalapati, Goutam Kumar Wong, Terence Kin Shun Li, Yang Chia, Ching Kean Das, Anindita Mahata, Chandreswar Gao, Han Chattopadhyay, Sanatan Kumar, Manippady Krishna Seng, Hwee Leng Maiti, Chinmay Kumar Chi, Dong Zhi |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dalapati, Goutam Kumar Wong, Terence Kin Shun Li, Yang Chia, Ching Kean Das, Anindita Mahata, Chandreswar Gao, Han Chattopadhyay, Sanatan Kumar, Manippady Krishna Seng, Hwee Leng Maiti, Chinmay Kumar Chi, Dong Zhi |
| author_sort | Dalapati, Goutam Kumar |
| collection | NTU |
| description | Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). |
| first_indexed | 2024-10-01T04:14:32Z |
| format | Journal Article |
| id | ntu-10356/95231 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:14:32Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/952312019-12-06T19:10:53Z Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping Dalapati, Goutam Kumar Wong, Terence Kin Shun Li, Yang Chia, Ching Kean Das, Anindita Mahata, Chandreswar Gao, Han Chattopadhyay, Sanatan Kumar, Manippady Krishna Seng, Hwee Leng Maiti, Chinmay Kumar Chi, Dong Zhi School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV). Published version 2013-03-05T02:47:24Z 2019-12-06T19:10:53Z 2013-03-05T02:47:24Z 2019-12-06T19:10:53Z 2012 2012 Journal Article Dalapati, G. K., Wong, T. K. S., Li, Y., Chia, C. K., Das, A., Mahata, C., et al. (2012). Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping. Nanoscale Research Letters, 7. https://hdl.handle.net/10356/95231 http://hdl.handle.net/10220/9334 http://www.nanoscalereslett.com/content/7/1/99 en Nanoscale research letters © 2012 The Authors. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Dalapati, Goutam Kumar Wong, Terence Kin Shun Li, Yang Chia, Ching Kean Das, Anindita Mahata, Chandreswar Gao, Han Chattopadhyay, Sanatan Kumar, Manippady Krishna Seng, Hwee Leng Maiti, Chinmay Kumar Chi, Dong Zhi Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title_full | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title_fullStr | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title_full_unstemmed | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title_short | Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping |
| title_sort | characterization of epitaxial gaas mos capacitors using atomic layer deposited tio2 al2o3 gate stack study of ge auto doping and p type zn doping |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/95231 http://hdl.handle.net/10220/9334 http://www.nanoscalereslett.com/content/7/1/99 |
| work_keys_str_mv | AT dalapatigoutamkumar characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT wongterencekinshun characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT liyang characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT chiachingkean characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT dasanindita characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT mahatachandreswar characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT gaohan characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT chattopadhyaysanatan characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT kumarmanippadykrishna characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT senghweeleng characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT maitichinmaykumar characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping AT chidongzhi characterizationofepitaxialgaasmoscapacitorsusingatomiclayerdepositedtio2al2o3gatestackstudyofgeautodopingandptypezndoping |