Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack : study of Ge auto-doping and p-type Zn doping

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic che...

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Bibliographic Details
Main Authors: Dalapati, Goutam Kumar, Wong, Terence Kin Shun, Li, Yang, Chia, Ching Kean, Das, Anindita, Mahata, Chandreswar, Gao, Han, Chattopadhyay, Sanatan, Kumar, Manippady Krishna, Seng, Hwee Leng, Maiti, Chinmay Kumar, Chi, Dong Zhi
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/95231
http://hdl.handle.net/10220/9334
http://www.nanoscalereslett.com/content/7/1/99

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