Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film
In this work, lateral charge diffusion in Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film has been simulated with Silvaco-TCAD tool by monitoring the influence of the charging of the nanocrystal in one metal-oxide-semiconductor structure on its neighboring devices. With the existence of th...
| Principais autores: | , , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2013
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| Acesso em linha: | https://hdl.handle.net/10356/95235 http://hdl.handle.net/10220/9148 |
| Resumo: | In this work, lateral charge diffusion in Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film has been simulated with Silvaco-TCAD tool by monitoring the influence of the charging of the nanocrystal in one metal-oxide-semiconductor structure on its neighboring devices. With the existence of the nc-Si layer in the spacing regions between the charged device and a neighboring device, a flatband voltage shift can be observed in the neighboring device after a charging operation on the charged device. The phenomena are explained in terms of the lateral charge diffusion in the nc-Si layer. The lateral charge diffusion can cause the interference among the neighboring devices. |
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