The electronic barrier height of silicon native oxides at different oxidation stages
A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron trans...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/95358 http://hdl.handle.net/10220/9206 |
| _version_ | 1811695863606542336 |
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| author | Qin, H. L. Goh, K. E. J. Troadec, C. Bosman, Michel Pey, Kin Leong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qin, H. L. Goh, K. E. J. Troadec, C. Bosman, Michel Pey, Kin Leong |
| author_sort | Qin, H. L. |
| collection | NTU |
| description | A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron transmission decreases with increasing oxidation time, the electronic barrier height remains the same, even after oxidation for 1 week. After oxidation for 26 months, the oxide layer showed the bulk-like SiO2 barrier; however, some local areas still show the same barrier height as that of an Au/n-Si device. This demonstrates the non-uniformity of native oxide growth. |
| first_indexed | 2024-10-01T07:30:14Z |
| format | Journal Article |
| id | ntu-10356/95358 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:30:14Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/953582020-03-07T13:57:31Z The electronic barrier height of silicon native oxides at different oxidation stages Qin, H. L. Goh, K. E. J. Troadec, C. Bosman, Michel Pey, Kin Leong School of Electrical and Electronic Engineering A systematic study on silicon native oxides grown in ambient air at room temperature is carried out using ballistic electron emission microscopy. The electronic barrier height of Au/native oxide was directly measured for native oxides at different oxidation stages. While the ballistic electron transmission decreases with increasing oxidation time, the electronic barrier height remains the same, even after oxidation for 1 week. After oxidation for 26 months, the oxide layer showed the bulk-like SiO2 barrier; however, some local areas still show the same barrier height as that of an Au/n-Si device. This demonstrates the non-uniformity of native oxide growth. Published version 2013-02-20T07:57:42Z 2019-12-06T19:13:22Z 2013-02-20T07:57:42Z 2019-12-06T19:13:22Z 2012 2012 Journal Article Qin, H. L., Goh, K. E. J., Troadec, C., Bosman, M., & Pey, K. L. (2012). The electronic barrier height of silicon native oxides at different oxidation stages. Journal of applied physics, 111(5). 0021-8979 https://hdl.handle.net/10356/95358 http://hdl.handle.net/10220/9206 10.1063/1.3693556 en Journal of applied physics © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3693556]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Qin, H. L. Goh, K. E. J. Troadec, C. Bosman, Michel Pey, Kin Leong The electronic barrier height of silicon native oxides at different oxidation stages |
| title | The electronic barrier height of silicon native oxides at different oxidation stages |
| title_full | The electronic barrier height of silicon native oxides at different oxidation stages |
| title_fullStr | The electronic barrier height of silicon native oxides at different oxidation stages |
| title_full_unstemmed | The electronic barrier height of silicon native oxides at different oxidation stages |
| title_short | The electronic barrier height of silicon native oxides at different oxidation stages |
| title_sort | electronic barrier height of silicon native oxides at different oxidation stages |
| url | https://hdl.handle.net/10356/95358 http://hdl.handle.net/10220/9206 |
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