Resistive switching in a GaOx-NiOx p-n heterojunction

Resistive switching in a GaOx-NiOx p-n heterojunction

We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching behavior coincides with the switching between Ohmic conduction (low resistance) and rectifying behavior (high resistance...

Full description

Bibliographic Details
Main Authors: Sun, Xiaowei, Leck, Kheng Swee, Zheng, K., Zhao, J. L., Vinh, V. Q., Zhao, R., Yeo, Y. G., Law, L. T., Teo, K. L.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Physics
Online Access:https://hdl.handle.net/10356/95443
http://hdl.handle.net/10220/9137

Similar Items

Similar Items