AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/95566 http://hdl.handle.net/10220/9346 |
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| author | Dolmanan, S. B. Kajen, R. S. Bera, L. K. Teo, S. L. Wang, W. Z. Li, H. Lee, D. Han, S. Tripathy, Sudhiranjan Lin, Vivian Kaixin Tan, Joyce Pei Ying Kumar, M. Krishna Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Todd, Shane Lo, Guo-Qiang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dolmanan, S. B. Kajen, R. S. Bera, L. K. Teo, S. L. Wang, W. Z. Li, H. Lee, D. Han, S. Tripathy, Sudhiranjan Lin, Vivian Kaixin Tan, Joyce Pei Ying Kumar, M. Krishna Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Todd, Shane Lo, Guo-Qiang |
| author_sort | Dolmanan, S. B. |
| collection | NTU |
| description | This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1 μm. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm2/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications. |
| first_indexed | 2024-10-01T03:31:27Z |
| format | Journal Article |
| id | ntu-10356/95566 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:31:27Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/955662020-09-26T22:16:58Z AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) Dolmanan, S. B. Kajen, R. S. Bera, L. K. Teo, S. L. Wang, W. Z. Li, H. Lee, D. Han, S. Tripathy, Sudhiranjan Lin, Vivian Kaixin Tan, Joyce Pei Ying Kumar, M. Krishna Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Todd, Shane Lo, Guo-Qiang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic systems This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1 μm. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm2/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications. Published version 2013-03-05T07:04:04Z 2019-12-06T19:17:28Z 2013-03-05T07:04:04Z 2019-12-06T19:17:28Z 2012 2012 Journal Article Tripathy, S., Lin, V. K. X., Dolmanan, S. B., Tan, J. P. Y., Kajen, R. S., Bera, L. K., et al. (2012). AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111). Applied Physics Letters, 101(8), 082110-. 0003-6951 https://hdl.handle.net/10356/95566 http://hdl.handle.net/10220/9346 10.1063/1.4746751 en Applied physics letters © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4746751]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Dolmanan, S. B. Kajen, R. S. Bera, L. K. Teo, S. L. Wang, W. Z. Li, H. Lee, D. Han, S. Tripathy, Sudhiranjan Lin, Vivian Kaixin Tan, Joyce Pei Ying Kumar, M. Krishna Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Todd, Shane Lo, Guo-Qiang AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title_full | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title_fullStr | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title_full_unstemmed | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title_short | AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) |
| title_sort | algan gan two dimensional electron gas heterostructures on 200 mm diameter si 111 |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems |
| url | https://hdl.handle.net/10356/95566 http://hdl.handle.net/10220/9346 |
| work_keys_str_mv | AT dolmanansb algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT kajenrs algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT beralk algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT teosl algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT wangwz algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT lih algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT leed algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT hans algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT tripathysudhiranjan algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT linviviankaixin algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT tanjoycepeiying algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT kumarmkrishna algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT arulkumaransubramaniam algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT nggeoking algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT vickneshsahmuganathan algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT toddshane algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 AT loguoqiang algangantwodimensionalelectrongasheterostructureson200mmdiametersi111 |