Domain-related origin of magnetic relaxation in compressively strained manganite thin films
Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external m...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/95574 http://hdl.handle.net/10220/9138 |
| _version_ | 1811689409033011200 |
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| author | Miao, B. F. Lin, W. Hu, W. David, A. Ding, H. F. Wu, T. Bakaul, Saidur Rahman |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Miao, B. F. Lin, W. Hu, W. David, A. Ding, H. F. Wu, T. Bakaul, Saidur Rahman |
| author_sort | Miao, B. F. |
| collection | NTU |
| description | Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films. |
| first_indexed | 2024-10-01T05:47:38Z |
| format | Journal Article |
| id | ntu-10356/95574 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:47:38Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/955742023-02-28T19:39:11Z Domain-related origin of magnetic relaxation in compressively strained manganite thin films Miao, B. F. Lin, W. Hu, W. David, A. Ding, H. F. Wu, T. Bakaul, Saidur Rahman School of Physical and Mathematical Sciences DRNTU::Engineering::Materials::Magnetic materials Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films. Published version 2013-02-18T08:54:18Z 2019-12-06T19:17:40Z 2013-02-18T08:54:18Z 2019-12-06T19:17:40Z 2012 2012 Journal Article Bakaul, S. R., Miao, B. F., Lin, W., Hu, W., David, A., Ding, H. F., et al. (2012). Domain-related origin of magnetic relaxation in compressively strained manganite thin films. Applied Physics Letters, 101(1), 012408-. 0003-6951 https://hdl.handle.net/10356/95574 http://hdl.handle.net/10220/9138 10.1063/1.4733320 en Applied physics letters © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4733320]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Magnetic materials Miao, B. F. Lin, W. Hu, W. David, A. Ding, H. F. Wu, T. Bakaul, Saidur Rahman Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title | Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title_full | Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title_fullStr | Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title_full_unstemmed | Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title_short | Domain-related origin of magnetic relaxation in compressively strained manganite thin films |
| title_sort | domain related origin of magnetic relaxation in compressively strained manganite thin films |
| topic | DRNTU::Engineering::Materials::Magnetic materials |
| url | https://hdl.handle.net/10356/95574 http://hdl.handle.net/10220/9138 |
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