Multiple-pulse laser thermal annealing for the formation of Co-silicided junction
Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-wi...
| Autores principales: | , , , , , , |
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| Otros Autores: | |
| Formato: | Journal Article |
| Lenguaje: | English |
| Publicado: |
2012
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| Materias: | |
| Acceso en línea: | https://hdl.handle.net/10356/95649 http://hdl.handle.net/10220/8339 |
| _version_ | 1826117865193865216 |
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| author | Lee, Pooi See Pey, Kin Leong Chow, F. L. Tang, L. J. Tung, Chih Hang Wang, X. C. Lim, G. C. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Lee, Pooi See Pey, Kin Leong Chow, F. L. Tang, L. J. Tung, Chih Hang Wang, X. C. Lim, G. C. |
| author_sort | Lee, Pooi See |
| collection | NTU |
| description | Formation of Co-silicide contact layers on narrow
silicon regions using multiple-pulse excimer laser annealing is
demonstrated. Excellent performance of junction leakage behavior
can be attained on narrow-width n+/p and p+/n junction
as compared with standard rapid thermal annealed samples.
Liquid-phase epitaxial Co-silicide regrowth has been found to
occur and create a smooth and abrupt silicide/Si interface with
high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding
the narrow-width n+/p and p+/n junctions has minimized rapid
quenching that might result in an amorphous structure. This has
facilitated the crystallization of Co-silicide with multiple-pulse
laser annealing. |
| first_indexed | 2024-10-01T04:34:40Z |
| format | Journal Article |
| id | ntu-10356/95649 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:34:40Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/956492023-07-14T15:53:52Z Multiple-pulse laser thermal annealing for the formation of Co-silicided junction Lee, Pooi See Pey, Kin Leong Chow, F. L. Tang, L. J. Tung, Chih Hang Wang, X. C. Lim, G. C. School of Materials Science & Engineering DRNTU::Engineering::Materials Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-width n+/p and p+/n junction as compared with standard rapid thermal annealed samples. Liquid-phase epitaxial Co-silicide regrowth has been found to occur and create a smooth and abrupt silicide/Si interface with high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding the narrow-width n+/p and p+/n junctions has minimized rapid quenching that might result in an amorphous structure. This has facilitated the crystallization of Co-silicide with multiple-pulse laser annealing. Accepted version 2012-07-26T01:37:21Z 2019-12-06T19:18:57Z 2012-07-26T01:37:21Z 2019-12-06T19:18:57Z 2006 2006 Journal Article Lee, P. S., Pey, K. L., Chow, F. L., Tang, L. J., Tung, C. H., Wang, X. C., et al. (2006). Multiple-pulse Laser Thermal Annealing for the Formation of Co-silicided Junction. IEEE Electron Device Letters, 27(4), 237-239. https://hdl.handle.net/10356/95649 http://hdl.handle.net/10220/8339 10.1109/LED.2006.871536 en IEEE electron device letters © 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2006.871536. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Lee, Pooi See Pey, Kin Leong Chow, F. L. Tang, L. J. Tung, Chih Hang Wang, X. C. Lim, G. C. Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title | Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title_full | Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title_fullStr | Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title_full_unstemmed | Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title_short | Multiple-pulse laser thermal annealing for the formation of Co-silicided junction |
| title_sort | multiple pulse laser thermal annealing for the formation of co silicided junction |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/95649 http://hdl.handle.net/10220/8339 |
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