Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-wi...

Descrizione completa

Dettagli Bibliografici
Autori principali:	Lee, Pooi See, Pey, Kin Leong, Chow, F. L., Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
Altri autori:	School of Materials Science & Engineering
Natura:	Journal Article
Lingua:	English
Pubblicazione:	2012
Soggetti:	DRNTU::Engineering::Materials
Accesso online:	https://hdl.handle.net/10356/95649 http://hdl.handle.net/10220/8339

Documenti analoghi

Nickel silicide formation using multiple-pulsed laser annealing
di: Setiawan, Y., et al.
Pubblicazione: (2012)

Silicide formation from laser thermal processing of Ti/Co bilayers
di: Chow, F. L., et al.
Pubblicazione: (2012)

Pulsed laser induced silicidation on TiN-capped Co/Si bilayers
di: Chow, F. L., et al.
Pubblicazione: (2012)

Characterization of the junction leakage of Ti-capped Ni-silicided junctions
di: Lee, Pooi See, et al.
Pubblicazione: (2013)

Laser induced Ni(Ti) silicide formation
di: Setiawan, Y., et al.
Pubblicazione: (2012)

Effect of Ti alloying in nickel silicide formation
di: Setiawan, Y., et al.
Pubblicazione: (2013)

Pulsed laser annealed silicides formation for advanced MOS applications
di: Yudi, Setiawan.
Pubblicazione: (2009)

Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
di: Chow, Fong Ling
Pubblicazione: (2008)

Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
di: Ong, K. K., et al.
Pubblicazione: (2012)

Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides
di: Mangelinck, D., et al.
Pubblicazione: (2012)

Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
di: Wang, X. C., et al.
Pubblicazione: (2013)

Pyramidal structural defects in erbium silicide thin films
di: Srolovitz, David J., et al.
Pubblicazione: (2012)

Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines
di: Pey, Kin Leong, et al.
Pubblicazione: (2013)

On the morphological changes of Ni- and Ni(Pt)-silicides
di: Mangelinck, D., et al.
Pubblicazione: (2012)

Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels
di: Tang, L. J., et al.
Pubblicazione: (2012)

An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage
di: Tan, Dexter Xue Ming, et al.
Pubblicazione: (2019)

Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
di: Mangelinck, D., et al.
Pubblicazione: (2013)

Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
di: Tang, L. J., et al.
Pubblicazione: (2012)

Effect of ion implantation on layer inversion of Ni silicided poly-Si
di: Mangelinck, D., et al.
Pubblicazione: (2012)

Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes
di: Mangelinck, D., et al.
Pubblicazione: (2012)

Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
di: Mangelinck, D., et al.
Pubblicazione: (2012)

Micro-RBS study of nickel silicide formation
di: Lee, Pooi See, et al.
Pubblicazione: (2013)

Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
di: Ong, Kuang Kian
Pubblicazione: (2010)

Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates
di: Setiawan, Y., et al.
Pubblicazione: (2012)

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
di: Cui, Guangda, et al.
Pubblicazione: (2012)

Effect of Oxygen on Ni-Silicided FUSI Metal Gate
di: Yu, H.P., et al.
Pubblicazione: (2005)

Defect engineering coupled with pulsed laser annealing for p+/n junction formation and pMOSFETs device enhancement
di: Tan, Dexter Xueming.
Pubblicazione: (2012)

Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
di: Tan, Eu Jin, et al.
Pubblicazione: (2013)

Evolution of surface roughness during metal silicides phase transformation
di: Pang, C. H., et al.
Pubblicazione: (2012)

Vertical silicon nanowire diode with nickel silicide induced dopant segregation
di: Li, Xiang, et al.
Pubblicazione: (2013)

Erbium silicidation on SiGe for advanced MOS application
di: Yiew, Daphne Q. F., et al.
Pubblicazione: (2013)

Interfacial reacions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
di: Pey, Kin Leong, et al.
Pubblicazione: (2012)

Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure
di: Setiawan, Y., et al.
Pubblicazione: (2012)

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing
di: Setiawan, Y., et al.
Pubblicazione: (2012)

Electrical properties of textured carbon film formed by pulsed laser annealing
di: Xu, Naiyun, et al.
Pubblicazione: (2013)

Effect of nickel silicide induced dopant segregation on vertical silicon nanowire diode performance
di: Tan, Chuan Seng, et al.
Pubblicazione: (2014)

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
di: Yu, Hongpeng, et al.
Pubblicazione: (2007)

Titanium Silicide Formation in Presence of Oxygen
di: C. Nobili, et al.
Pubblicazione: (1992-01-01)

Aluminum Josephson junction microstructure and electrical properties modified by thermal annealing
di: Nikita D. Korshakov, et al.
Pubblicazione: (2024-10-01)

Scanned pulsed laser annealing of Cu thin films
di: Verma, Harsh Anand, 1980-
Pubblicazione: (2006)