Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 |
| _version_ | 1824456980082720768 |
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| author | Tang, L. J. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Tang, L. J. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See |
| author_sort | Tang, L. J. |
| collection | NTU |
| description | Erbium silicide Schottky diodes formed on Si(001)
substrate using rapid thermal annealing method show degraded
Schottky-barrier height ϕ_Beff and ideality factor due to the
presence of silicide-induced microstructural defects which are
likely sources of trap states. A method to improve the ϕ_Beff and
of the diodes utilizing in situ Ar plasma cleaning to induce a light
amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer
interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous
Schottky contact model. |
| first_indexed | 2025-02-19T04:02:43Z |
| format | Journal Article |
| id | ntu-10356/95651 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T04:02:43Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/956512023-07-14T15:53:55Z Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si Tang, L. J. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the ϕ_Beff and of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model. Accepted version 2012-07-26T00:57:31Z 2019-12-06T19:19:00Z 2012-07-26T00:57:31Z 2019-12-06T19:19:00Z 2006 2006 Journal Article Tan, E. J., Pey, K. L., Chi, D. Z., Lee, P. S., & Tang, L. J. (2006). Improved Electrical Performance of Erbium Silicide Schottky Diodes formed by pre-RTA Amorphization of Si. IEEE Electron Device Letters, 27(2), 93-95. https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 10.1109/LED.2005.863142 en IEEE electron device letters © 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/LED.2005.863142. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Tang, L. J. Tan, Eu Jin Pey, Kin Leong Chi, Dong Zhi Lee, Pooi See Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title_full | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title_fullStr | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title_full_unstemmed | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title_short | Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si |
| title_sort | improved electrical performance of erbium silicide schottky diodes formed by pre rta amorphization of si |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 |
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