Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 |