Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode
n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/95679 http://hdl.handle.net/10220/8275 |
| _version_ | 1826122994362089472 |
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| author | Qi, K. C. Ling, Bo Sun, Xiaowei Zhao, Jun Liang Tan, Swee Tiam Dong, Zhili Yang, Yi Yu, Hongyu |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Qi, K. C. Ling, Bo Sun, Xiaowei Zhao, Jun Liang Tan, Swee Tiam Dong, Zhili Yang, Yi Yu, Hongyu |
| author_sort | Qi, K. C. |
| collection | NTU |
| description | n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs. |
| first_indexed | 2024-10-01T05:57:41Z |
| format | Journal Article |
| id | ntu-10356/95679 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:57:41Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/956792020-06-01T10:01:56Z Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode Qi, K. C. Ling, Bo Sun, Xiaowei Zhao, Jun Liang Tan, Swee Tiam Dong, Zhili Yang, Yi Yu, Hongyu School of Materials Science & Engineering DRNTU::Engineering::Materials n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs. Accepted version 2012-07-03T05:53:10Z 2019-12-06T19:19:42Z 2012-07-03T05:53:10Z 2019-12-06T19:19:42Z 2008 2008 Journal Article Ling, B., Sun, X., Zhao, J. L., Tan, S. T., Dong, Z. L., Yang, Y., et al. (2009). Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode. Physica E, 41(4), 635-639. https://hdl.handle.net/10356/95679 http://hdl.handle.net/10220/8275 10.1016/j.physe.2008.10.017 en Physica E © 2008 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Physica E, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: http://dx.doi.org/10.1016/j.physe.2008.10.017. 16 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Qi, K. C. Ling, Bo Sun, Xiaowei Zhao, Jun Liang Tan, Swee Tiam Dong, Zhili Yang, Yi Yu, Hongyu Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title | Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title_full | Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title_fullStr | Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title_full_unstemmed | Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title_short | Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode |
| title_sort | electroluminescence from a n zno nanorod p cualo2 heterojunction light emitting diode |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/95679 http://hdl.handle.net/10220/8275 |
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