Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process
CuInSe2 (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)3 with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of p...
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| Aineistotyyppi: | Journal Article |
| Kieli: | English |
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2012
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| Aiheet: | |
| Linkit: | https://hdl.handle.net/10356/95684 http://hdl.handle.net/10220/8331 |
| _version_ | 1826111160111333376 |
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| author | Zhou, Wenwen Yin, Zongyou Sim, Daohao Zhang, Hua Ma, Jan Hng, Huey Hoon Yan, Qingyu |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Zhou, Wenwen Yin, Zongyou Sim, Daohao Zhang, Hua Ma, Jan Hng, Huey Hoon Yan, Qingyu |
| author_sort | Zhou, Wenwen |
| collection | NTU |
| description | CuInSe2 (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)3 with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm–2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)2 in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ~ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer–Emmett–Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m2 g − 1, which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m2 g − 1) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices. |
| first_indexed | 2024-10-01T02:46:06Z |
| format | Journal Article |
| id | ntu-10356/95684 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:46:06Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | ntu-10356/956842023-07-14T15:54:00Z Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process Zhou, Wenwen Yin, Zongyou Sim, Daohao Zhang, Hua Ma, Jan Hng, Huey Hoon Yan, Qingyu School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials CuInSe2 (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)3 with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm–2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)2 in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ~ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer–Emmett–Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m2 g − 1, which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m2 g − 1) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices. Accepted version 2012-07-13T04:31:24Z 2019-12-06T19:19:48Z 2012-07-13T04:31:24Z 2019-12-06T19:19:48Z 2011 2011 Journal Article Zhou, W., Yin, Z., Sim, D., Zhang, H., Ma, J., Hng, H. H., & Yan, Q. (2011). Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process. Nanotechnology, 22, 195607. https://hdl.handle.net/10356/95684 http://hdl.handle.net/10220/8331 10.1088/0957-4484/22/19/195607 en Nanotechnology © 2011 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanotechnology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0957-4484/22/19/195607]. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials Zhou, Wenwen Yin, Zongyou Sim, Daohao Zhang, Hua Ma, Jan Hng, Huey Hoon Yan, Qingyu Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title | Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title_full | Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title_fullStr | Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title_full_unstemmed | Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title_short | Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process |
| title_sort | growth of dandelion shaped cuinse2 nanostructures by a two step solvothermal process |
| topic | DRNTU::Engineering::Materials::Nanostructured materials |
| url | https://hdl.handle.net/10356/95684 http://hdl.handle.net/10220/8331 |
| work_keys_str_mv | AT zhouwenwen growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT yinzongyou growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT simdaohao growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT zhanghua growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT majan growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT hnghueyhoon growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess AT yanqingyu growthofdandelionshapedcuinse2nanostructuresbyatwostepsolvothermalprocess |