Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission
GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/95991 http://hdl.handle.net/10220/11368 |
| _version_ | 1826126006221537280 |
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| author | Liang, Y. Y. Ngo, C. Y. Fitzgerald, Eugene A. Yoon, Soon Fatt Loke, Wan Khai |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liang, Y. Y. Ngo, C. Y. Fitzgerald, Eugene A. Yoon, Soon Fatt Loke, Wan Khai |
| author_sort | Liang, Y. Y. |
| collection | NTU |
| description | GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. |
| first_indexed | 2024-10-01T06:45:41Z |
| format | Journal Article |
| id | ntu-10356/95991 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:45:41Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/959912020-03-07T14:02:45Z Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission Liang, Y. Y. Ngo, C. Y. Fitzgerald, Eugene A. Yoon, Soon Fatt Loke, Wan Khai School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is promising to integrate the InAs/InGaAs/GaAs QDs on Si with the use of germanium-on-insulator-on-silicon (GeOI) substrates, reported results exhibit bimodal QD sizes and double emission peaks, i.e. unsatisfactory for realistic applications. In this paper, we showed that with an optimized GaAs buffer, single-peak 1.33 µm room-temperature emission can be obtained from InAs/InGaAs/GaAs QDs on GeOI substrates. 2013-07-15T02:48:45Z 2019-12-06T19:24:05Z 2013-07-15T02:48:45Z 2019-12-06T19:24:05Z 2012 2012 Journal Article Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2012). Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission. Journal of Physics D: Applied Physics, 45(14), 145103-. https://hdl.handle.net/10356/95991 http://hdl.handle.net/10220/11368 10.1088/0022-3727/45/14/145103 en Journal of physics D : applied physics © 2012 IOP Publishing Ltd. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Liang, Y. Y. Ngo, C. Y. Fitzgerald, Eugene A. Yoon, Soon Fatt Loke, Wan Khai Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title_full | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title_fullStr | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title_full_unstemmed | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title_short | Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission |
| title_sort | characteristics of inas ingaas gaas qds on geoi substrates with single peak 1 3 µm room temperature emission |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/95991 http://hdl.handle.net/10220/11368 |
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