Perspective of flash memory realized on vertical Si nanowires

In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with...

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Bibliographic Details
Main Authors: Yu, Hongyu, Sun, Yuan, Singh, Navab, Lo, Guo-Qing, Kwong, Dim Lee
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96165
http://hdl.handle.net/10220/11120

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