Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96605 http://hdl.handle.net/10220/10320 |
| _version_ | 1826128121123831808 |
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| author | Ong, Shih Ni Yeo, Kiat Seng Chew, Kok Wai Johnny Chan, L. H. K. Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ong, Shih Ni Yeo, Kiat Seng Chew, Kok Wai Johnny Chan, L. H. K. Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh |
| author_sort | Ong, Shih Ni |
| collection | NTU |
| description | This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise models are derived in four different cases considering the effect of CLM only, CLM and VSE, CLM and HCE, and the combine effect of CLM, VSE and HCE. The noise reduction due to the VSE is found to be completely cancelled out by the noise increment due to the HCE for all the operating conditions. |
| first_indexed | 2024-10-01T07:19:45Z |
| format | Journal Article |
| id | ntu-10356/96605 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:19:45Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/966052020-03-07T14:02:47Z Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs Ong, Shih Ni Yeo, Kiat Seng Chew, Kok Wai Johnny Chan, L. H. K. Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise models are derived in four different cases considering the effect of CLM only, CLM and VSE, CLM and HCE, and the combine effect of CLM, VSE and HCE. The noise reduction due to the VSE is found to be completely cancelled out by the noise increment due to the HCE for all the operating conditions. 2013-06-13T04:06:14Z 2019-12-06T19:32:57Z 2013-06-13T04:06:14Z 2019-12-06T19:32:57Z 2012 2012 Journal Article Ong, S. N., Yeo, K. S., Chew, K. W. J., Chan, L. H. K., Loo, X. S., Boon, C. C., et al. (2012). Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs. Solid-state electronics, 72, 8-11. 0038-1101 https://hdl.handle.net/10356/96605 http://hdl.handle.net/10220/10320 10.1016/j.sse.2012.02.008 en Solid-state electronics © 2012 Elsevier Ltd. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ong, Shih Ni Yeo, Kiat Seng Chew, Kok Wai Johnny Chan, L. H. K. Loo, Xi Sung Boon, Chirn Chye Do, Manh Anh Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title | Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title_full | Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title_fullStr | Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title_full_unstemmed | Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title_short | Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs |
| title_sort | impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub micron mosfets |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/96605 http://hdl.handle.net/10220/10320 |
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