An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
An AlInP unicompositional single quantum well (QW) structure has been grown and studied by using metal-organic vapor phase epitaxy (MOVPE). The energy bandgap offset of the quantum well is achieved by taking the advantage of the AlInP epilayer’s bandgap energy reduction induced by its CuPt–B type sp...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96998 http://hdl.handle.net/10220/11674 |
| _version_ | 1826112058002767872 |
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| author | Tang, Xiaohong Zhao, Jinghua Teng, Jing Hua Yong, Anna Marie |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tang, Xiaohong Zhao, Jinghua Teng, Jing Hua Yong, Anna Marie |
| author_sort | Tang, Xiaohong |
| collection | NTU |
| description | An AlInP unicompositional single quantum well (QW) structure has been grown and studied by using metal-organic vapor phase epitaxy (MOVPE). The energy bandgap offset of the quantum well is achieved by taking the advantage of the AlInP epilayer’s bandgap energy reduction induced by its CuPt–B type spontaneous atomic ordering instead of by changing the QW layers’ compositions during the MOVPE growth. The degree of the CuPt–B atomic ordering of the AlInP epilayers of the QW structure was controlled by adjusting the input V/III flux ratio during the MOVPE growth. Low temperature photoluminescence (PL) measurement shows strong quantum confinement effect of the grown AlInP unicompositional QWs. After annealing at 900 °C for 30 s, the peak emission wavelength of the QW was measured. It remained at the same wavelength as that of the AlInP barrier layer, which showed the disappearance of the quantum confinement effect of the QW structure. This is attributed to the elimination of the CuPt–B atomic ordering of the AlInP epilayers of the QW sample under a high temperature annealing. The QW structure became a thick disordered AlInP bulky layer after the thermal annealing. |
| first_indexed | 2024-10-01T03:00:43Z |
| format | Journal Article |
| id | ntu-10356/96998 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:00:43Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/969982020-03-07T14:02:44Z An atomic ordering based AlInP unicompositional quantum well grown by MOVPE Tang, Xiaohong Zhao, Jinghua Teng, Jing Hua Yong, Anna Marie School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering An AlInP unicompositional single quantum well (QW) structure has been grown and studied by using metal-organic vapor phase epitaxy (MOVPE). The energy bandgap offset of the quantum well is achieved by taking the advantage of the AlInP epilayer’s bandgap energy reduction induced by its CuPt–B type spontaneous atomic ordering instead of by changing the QW layers’ compositions during the MOVPE growth. The degree of the CuPt–B atomic ordering of the AlInP epilayers of the QW structure was controlled by adjusting the input V/III flux ratio during the MOVPE growth. Low temperature photoluminescence (PL) measurement shows strong quantum confinement effect of the grown AlInP unicompositional QWs. After annealing at 900 °C for 30 s, the peak emission wavelength of the QW was measured. It remained at the same wavelength as that of the AlInP barrier layer, which showed the disappearance of the quantum confinement effect of the QW structure. This is attributed to the elimination of the CuPt–B atomic ordering of the AlInP epilayers of the QW sample under a high temperature annealing. The QW structure became a thick disordered AlInP bulky layer after the thermal annealing. 2013-07-17T03:34:46Z 2019-12-06T19:37:45Z 2013-07-17T03:34:46Z 2019-12-06T19:37:45Z 2012 2012 Journal Article Tang, X., Zhao, J., Teng, J. H., & Yong, A. M. (2012). An atomic ordering based AlInP unicompositional quantum well grown by MOVPE. Journal of crystal growth, 356, 1-3. 0022-0248 https://hdl.handle.net/10356/96998 http://hdl.handle.net/10220/11674 10.1016/j.jcrysgro.2012.06.049 en Journal of crystal growth © 2012 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Tang, Xiaohong Zhao, Jinghua Teng, Jing Hua Yong, Anna Marie An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title | An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title_full | An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title_fullStr | An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title_full_unstemmed | An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title_short | An atomic ordering based AlInP unicompositional quantum well grown by MOVPE |
| title_sort | atomic ordering based alinp unicompositional quantum well grown by movpe |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/96998 http://hdl.handle.net/10220/11674 |
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