On-chip diameter-dependent conversion of metallic to semiconducting single-walled carbon nanotubes by immersion in 2-ethylanthraquinone
The key hurdle to the practical use of as-grown single-walled carbon nanotubes (SWNTs) for high performance nanoelectronics is the unavoidable presence of metallic nanotubes with current synthesis methods. We present a simple approach to convert metallic SWNTs to semiconducting ones in situ to impro...
| Principais autores: | , , , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2013
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| Acesso em linha: | https://hdl.handle.net/10356/97028 http://hdl.handle.net/10220/10412 |
| Resumo: | The key hurdle to the practical use of as-grown single-walled carbon nanotubes (SWNTs) for high performance nanoelectronics is the unavoidable presence of metallic nanotubes with current synthesis methods. We present a simple approach to convert metallic SWNTs to semiconducting ones in situ to improve device field effect behaviour, using an aromatic compound (2-ethylanthraquinone - EAQ) which is a mild radical initiator. We show that the reaction between EAQ-generated radicals and SWNTs is diameter and metallicity dependent; in the medium-diameter regime (0.8 to 1.0 nm), the EAQ-generated radicals preferentially attack the metallic SWNTs over semiconducting ones and convert them to semiconducting, as evidenced by several orders (10 and 104) increase in the on/off ratio. |
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