Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
| _version_ | 1826114681179209728 |
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| author | Kusuma, Damar Yoga Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Kusuma, Damar Yoga Lee, Pooi See |
| author_sort | Kusuma, Damar Yoga |
| collection | NTU |
| description | Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. |
| first_indexed | 2024-10-01T03:43:06Z |
| format | Journal Article |
| id | ntu-10356/97095 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:43:06Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/970952020-06-01T10:13:35Z Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers Kusuma, Damar Yoga Lee, Pooi See School of Materials Science & Engineering Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use. 2013-06-17T07:15:00Z 2019-12-06T19:38:55Z 2013-06-17T07:15:00Z 2019-12-06T19:38:55Z 2012 2012 Journal Article Kusuma, D. Y., & Lee, P. S. (2012). Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers. Advanced Materials, 24(30), 4163-4169. 1521-4095 https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 10.1002/adma.201104476 en Advanced materials © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | Kusuma, Damar Yoga Lee, Pooi See Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_full | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_fullStr | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_full_unstemmed | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_short | Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| title_sort | ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers |
| url | https://hdl.handle.net/10356/97095 http://hdl.handle.net/10220/10458 |
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