Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si sub...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518 |
| _version_ | 1826119265857568768 |
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| author | Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. |
| author_sort | Pey, Kin Leong |
| collection | NTU |
| description | A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. |
| first_indexed | 2024-10-01T04:57:24Z |
| format | Journal Article |
| id | ntu-10356/97163 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:57:24Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/971632020-06-01T10:01:32Z Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed. 2013-06-21T02:55:16Z 2019-12-06T19:39:33Z 2013-06-21T02:55:16Z 2019-12-06T19:39:33Z 2003 2003 Journal Article Mangelinck, D., Lee, P. S., Osipowitcz, T., & Pey, K. L. (2004). Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 215(3-4), 495-500. 0168-583X https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518 10.1016/j.nimb.2003.08.040 en Nuclear instruments and methods in Physics research Section B: beam interactions with materials and atoms © 2003 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Materials Pey, Kin Leong Lee, Pooi See Mangelinck, D. Osipowitcz, T. Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title_full | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title_fullStr | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title_full_unstemmed | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title_short | Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry |
| title_sort | analysis of laterally non uniform layers and sub micron devices by rutherford backscattering spectrometry |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/97163 http://hdl.handle.net/10220/10518 |
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