Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiS...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97202 http://hdl.handle.net/10220/10542 |
| _version_ | 1826112855937646592 |
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| author | Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi |
| author_sort | Mangelinck, D. |
| collection | NTU |
| description | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. |
| first_indexed | 2024-10-01T03:13:56Z |
| format | Journal Article |
| id | ntu-10356/97202 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:13:56Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/972022020-06-01T10:01:59Z Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi School of Materials Science & Engineering The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. 2013-06-24T07:24:22Z 2019-12-06T19:40:09Z 2013-06-24T07:24:22Z 2019-12-06T19:40:09Z 2002 2002 Journal Article Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Osipowicz, T., et al. (2002). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic engineering, 60(1-2), 171-181. 0167-9317 https://hdl.handle.net/10356/97202 http://hdl.handle.net/10220/10542 10.1016/S0167-9317(01)00592-5 en Microelectronic engineering © 2002 Elsevier B.V. |
| spellingShingle | Mangelinck, D. Osipowicz, T. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title_full | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title_fullStr | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title_full_unstemmed | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title_short | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack |
| title_sort | enhanced stability of ni monosilicide on mosfets poly si gate stack |
| url | https://hdl.handle.net/10356/97202 http://hdl.handle.net/10220/10542 |
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