Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines
The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying element, the phase stability of NiSi on Si(100) was enhanced and the retardation...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97213 http://hdl.handle.net/10220/10478 |
| _version_ | 1826124816720068608 |
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| author | Pey, Kin Leong Lee, Pooi See Mangelinck, D. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Pey, Kin Leong Lee, Pooi See Mangelinck, D. |
| author_sort | Pey, Kin Leong |
| collection | NTU |
| description | The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying element, the phase stability of NiSi on Si(100) was enhanced and the retardation of NiSi2 was achieved by forming Ni(Pt)Si up to 900 °C. In addition, the agglomeration behavior has slightly improved. On narrow poly-Si lines, the addition of Pt improves slightly the layer inversion, which involves the bilayer reversal of silicide and poly-Si. Despite this, the Ni(Pt)Si phase on the narrow poly-Si lines is remarkably stable up to 800–900 °C. The implementation of the developed Ni(Pt) alloy silicide scheme to the state-of-the-art transistors shows that the electrical performance of the Ni(Pt)-silicided MOSFETs has been improved due to the enhanced stability of the Ni(Pt)Si as compared to the pure NiSi at relative high silicidation temperatures. |
| first_indexed | 2024-10-01T06:26:33Z |
| format | Journal Article |
| id | ntu-10356/97213 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:26:33Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/972132020-03-07T12:01:35Z Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines Pey, Kin Leong Lee, Pooi See Mangelinck, D. School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Materials::Metallic materials::Alloys The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying element, the phase stability of NiSi on Si(100) was enhanced and the retardation of NiSi2 was achieved by forming Ni(Pt)Si up to 900 °C. In addition, the agglomeration behavior has slightly improved. On narrow poly-Si lines, the addition of Pt improves slightly the layer inversion, which involves the bilayer reversal of silicide and poly-Si. Despite this, the Ni(Pt)Si phase on the narrow poly-Si lines is remarkably stable up to 800–900 °C. The implementation of the developed Ni(Pt) alloy silicide scheme to the state-of-the-art transistors shows that the electrical performance of the Ni(Pt)-silicided MOSFETs has been improved due to the enhanced stability of the Ni(Pt)Si as compared to the pure NiSi at relative high silicidation temperatures. 2013-06-18T07:43:51Z 2019-12-06T19:40:15Z 2013-06-18T07:43:51Z 2019-12-06T19:40:15Z 2004 2004 Journal Article Pey, K. L., Lee, P. S., & Mangelinck, D. (2004). Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines. Thin Solid Films, 462-463, 137-145. 0040-6090 https://hdl.handle.net/10356/97213 http://hdl.handle.net/10220/10478 10.1016/j.tsf.2004.05.098 en Thin solid films © 2004 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Materials::Metallic materials::Alloys Pey, Kin Leong Lee, Pooi See Mangelinck, D. Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title | Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title_full | Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title_fullStr | Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title_full_unstemmed | Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title_short | Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines |
| title_sort | ni pt alloy silicidation on 100 si and poly silicon lines |
| topic | DRNTU::Engineering::Materials::Metallic materials::Alloys |
| url | https://hdl.handle.net/10356/97213 http://hdl.handle.net/10220/10478 |
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