Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric
Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to att...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97215 http://hdl.handle.net/10220/10484 |
| _version_ | 1826112815997386752 |
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| author | Nguyen, Chien A. Mhaisalkar, Subodh Gautam Ma, Jan Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Nguyen, Chien A. Mhaisalkar, Subodh Gautam Ma, Jan Lee, Pooi See |
| author_sort | Nguyen, Chien A. |
| collection | NTU |
| description | Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to attain a topographically flat-grain structure and greatly reduce the surface roughness and current leakage of semi-crystalline copolymer film, while enhancing the preferred β-phase of the ferroelectric films. Resultant ferroelectric properties (PR = |10| μC/cm2, EC = |50| MV/m) for samples simultaneously stretched (50–70% strain) and heated below the Curie transition (70 oC) were comparable to those resulting from high temperature annealing (>140 oC). The observed enhancements by heating and stretching were studied by vibration spectroscopy and showed mutual complementary effects of both processes. Organic FeFET fabricated by thermal evaporating pentacene on the smooth P(VDF-TrFE) films showed substantial improvement of semiconductor grain growth and enhanced electrical characteristics with promising non-volatile memory functionality. |
| first_indexed | 2024-10-01T03:12:59Z |
| format | Journal Article |
| id | ntu-10356/97215 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:12:59Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/972152020-06-01T10:01:59Z Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric Nguyen, Chien A. Mhaisalkar, Subodh Gautam Ma, Jan Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Manufacturing::Polymers and plastics Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to attain a topographically flat-grain structure and greatly reduce the surface roughness and current leakage of semi-crystalline copolymer film, while enhancing the preferred β-phase of the ferroelectric films. Resultant ferroelectric properties (PR = |10| μC/cm2, EC = |50| MV/m) for samples simultaneously stretched (50–70% strain) and heated below the Curie transition (70 oC) were comparable to those resulting from high temperature annealing (>140 oC). The observed enhancements by heating and stretching were studied by vibration spectroscopy and showed mutual complementary effects of both processes. Organic FeFET fabricated by thermal evaporating pentacene on the smooth P(VDF-TrFE) films showed substantial improvement of semiconductor grain growth and enhanced electrical characteristics with promising non-volatile memory functionality. 2013-06-19T03:56:55Z 2019-12-06T19:40:17Z 2013-06-19T03:56:55Z 2019-12-06T19:40:17Z 2008 2008 Journal Article Nguyen, C. A., Mhaisalkar, S. G., Ma, J., & Lee, P. S. (2008). Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric. Organic electronics, 9(6), 1087-1092. 1566-1199 https://hdl.handle.net/10356/97215 http://hdl.handle.net/10220/10484 10.1016/j.orgel.2008.08.012 en Organic electronics © 2008 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Manufacturing::Polymers and plastics Nguyen, Chien A. Mhaisalkar, Subodh Gautam Ma, Jan Lee, Pooi See Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title | Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title_full | Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title_fullStr | Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title_full_unstemmed | Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title_short | Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric |
| title_sort | enhanced organic ferroelectric field effect transistor characteristics with strained poly vinylidene fluoride trifluoroethylene dielectric |
| topic | DRNTU::Engineering::Manufacturing::Polymers and plastics |
| url | https://hdl.handle.net/10356/97215 http://hdl.handle.net/10220/10484 |
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