Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers
In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97260 http://hdl.handle.net/10220/10481 |
| _version_ | 1826111529854959616 |
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| author | Sim, R. Chan, Mei Yin Wong, A. S. W. Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Sim, R. Chan, Mei Yin Wong, A. S. W. Lee, Pooi See |
| author_sort | Sim, R. |
| collection | NTU |
| description | In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS−) within the polymer composite. The electro-statically bonded PSS− within the polymer film segregates at the polymer’s interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS− layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2–3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation. |
| first_indexed | 2024-10-01T02:51:55Z |
| format | Journal Article |
| id | ntu-10356/97260 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:51:55Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/972602020-06-01T10:01:32Z Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers Sim, R. Chan, Mei Yin Wong, A. S. W. Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Chemical engineering::Polymers and polymer manufacture In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic acid) (PANI:PSSH)/ITO and operates via the migration of negatively charged counter-ions (PSS−) within the polymer composite. The electro-statically bonded PSS− within the polymer film segregates at the polymer’s interface upon electrical biasing, serving to disrupt current conduction pathways through the polymer by influencing the resonance state of the conducting main chain. By relocation of this PSS− layer at the polymer interface, electrical conductivity was modulated and an electrical bi-stable device was achieved. The resistive ratio between the ON/OFF states of the device is about 2–3 orders of magnitude, both of which can be read out for up to 500 times with negligible degradation. 2013-06-19T02:45:22Z 2019-12-06T19:40:40Z 2013-06-19T02:45:22Z 2019-12-06T19:40:40Z 2010 2010 Journal Article Sim, R., Chan, M. Y., Wong, A. S. W., & Lee, P. S. (2011). Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers. Organic electronics, 12(1), 185-189. 1566-1199 https://hdl.handle.net/10356/97260 http://hdl.handle.net/10220/10481 10.1016/j.orgel.2010.11.003 en Organic electronics © 2010 Elsevier B.V. |
| spellingShingle | DRNTU::Engineering::Chemical engineering::Polymers and polymer manufacture Sim, R. Chan, Mei Yin Wong, A. S. W. Lee, Pooi See Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title_full | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title_fullStr | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title_full_unstemmed | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title_short | Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers |
| title_sort | alternative resistive switching mechanism based on migration of charged counter ions within conductive polymers |
| topic | DRNTU::Engineering::Chemical engineering::Polymers and polymer manufacture |
| url | https://hdl.handle.net/10356/97260 http://hdl.handle.net/10220/10481 |
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