Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stabi...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97263 http://hdl.handle.net/10220/10479 |
| _version_ | 1811682472050556928 |
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| author | Mangelinck, D. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Mangelinck, D. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi |
| author_sort | Mangelinck, D. |
| collection | NTU |
| description | The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si. |
| first_indexed | 2024-10-01T03:57:23Z |
| format | Journal Article |
| id | ntu-10356/97263 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:57:23Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/972632020-06-01T10:21:10Z Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation Mangelinck, D. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi School of Materials Science & Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si. 2013-06-19T00:48:19Z 2019-12-06T19:40:41Z 2013-06-19T00:48:19Z 2019-12-06T19:40:41Z 2001 2001 Journal Article Lee, P. S., Mangelinck, D., Pey, K. L., Ding, J., Chi, D. Z., Dai, J. Y., et al. (2001). Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation. Journal of electronic materials, 30(12), 1554-1559. 0361-5235 https://hdl.handle.net/10356/97263 http://hdl.handle.net/10220/10479 10.1007/s11664-001-0173-1 en Journal of electronic materials © 2001 TMS. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Mangelinck, D. Dai, J. Y. See, A. Lee, Pooi See Pey, Kin Leong Ding, Jun Chi, Dong Zhi Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title | Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title_full | Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title_fullStr | Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title_full_unstemmed | Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title_short | Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation |
| title_sort | nickel silicide formation on si 100 and poly si with a presilicide n2 implantation |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | https://hdl.handle.net/10356/97263 http://hdl.handle.net/10220/10479 |
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