Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stabi...
Main Authors: | Mangelinck, D., Dai, J. Y., See, A., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi |
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Other Authors: | School of Materials Science & Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97263 http://hdl.handle.net/10220/10479 |
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