Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stabi...
| المؤلفون الرئيسيون: | , , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | Journal Article |
| اللغة: | English |
| منشور في: |
2013
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/97263 http://hdl.handle.net/10220/10479 |