Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in t...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97309 http://hdl.handle.net/10220/11837 |
| _version_ | 1824456241554915328 |
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| author | Ji, Y. Kyaw, Z. B. Lu, S. P. Zhang, Y. P. Zhu, B. B. Ju, Zhengang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Zhang, Xueliang Namig, Hasanov Sun, Xiaowei Demir, Hilmi Volkan |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Ji, Y. Kyaw, Z. B. Lu, S. P. Zhang, Y. P. Zhu, B. B. Ju, Zhengang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Zhang, Xueliang Namig, Hasanov Sun, Xiaowei Demir, Hilmi Volkan |
| author_sort | Ji, Y. |
| collection | NTU |
| description | InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC. |
| first_indexed | 2025-02-19T03:50:58Z |
| format | Journal Article |
| id | ntu-10356/97309 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:50:58Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973092023-02-28T19:40:36Z Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Ji, Y. Kyaw, Z. B. Lu, S. P. Zhang, Y. P. Zhu, B. B. Ju, Zhengang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Zhang, Xueliang Namig, Hasanov Sun, Xiaowei Demir, Hilmi Volkan School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC. Published version 2013-07-18T03:06:31Z 2019-12-06T19:41:19Z 2013-07-18T03:06:31Z 2019-12-06T19:41:19Z 2013 2013 Journal Article Ju, Z. G., Liu, W., Zhang, Z.-H., Tan, S. T., Ji, Y., Kyaw, Z. B., et al. (2013). Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers. Applied physics letters, 102(24), 243504-. 0003-6951 https://hdl.handle.net/10356/97309 http://hdl.handle.net/10220/11837 10.1063/1.4811698 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4811698]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Ji, Y. Kyaw, Z. B. Lu, S. P. Zhang, Y. P. Zhu, B. B. Ju, Zhengang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Zhang, Xueliang Namig, Hasanov Sun, Xiaowei Demir, Hilmi Volkan Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title | Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title_full | Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title_fullStr | Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title_full_unstemmed | Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title_short | Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers |
| title_sort | improved hole distribution in ingan gan light emitting diodes with graded thickness quantum barriers |
| url | https://hdl.handle.net/10356/97309 http://hdl.handle.net/10220/11837 |
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