Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in t...

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Bibliographic Details
Main Authors: Ji, Y., Kyaw, Z. B., Lu, S. P., Zhang, Y. P., Zhu, B. B., Ju, Zhengang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Zhang, Xueliang, Namig, Hasanov, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97309
http://hdl.handle.net/10220/11837

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