Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resis...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97328 http://hdl.handle.net/10220/11838 |
| _version_ | 1826125070619115520 |
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| author | Gao, Bin Yu, Hongyu Kang, J. F. Chen, B. Liu, L. F. Liu, X. Y. Wang, Z. R. Yu, B. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Gao, Bin Yu, Hongyu Kang, J. F. Chen, B. Liu, L. F. Liu, X. Y. Wang, Z. R. Yu, B. |
| author_sort | Gao, Bin |
| collection | NTU |
| description | A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. |
| first_indexed | 2024-10-01T06:31:04Z |
| format | Conference Paper |
| id | ntu-10356/97328 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:04Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973282020-03-07T13:24:47Z Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage Gao, Bin Yu, Hongyu Kang, J. F. Chen, B. Liu, L. F. Liu, X. Y. Wang, Z. R. Yu, B. School of Electrical and Electronic Engineering IEEE International Memory Workshop (4th : 2012 : Milan, Italy) DRNTU::Engineering::Electrical and electronic engineering A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. 2013-07-18T03:09:10Z 2019-12-06T19:41:31Z 2013-07-18T03:09:10Z 2019-12-06T19:41:31Z 2012 2012 Conference Paper Kang, J. F., Gao, B., Chen, B., Liu, L. F., Liu, X. Y., Yu, H., et al. (2012). Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage. 2012 4th IEEE International Memory Workshop. https://hdl.handle.net/10356/97328 http://hdl.handle.net/10220/11838 10.1109/IMW.2012.6213664 en © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Gao, Bin Yu, Hongyu Kang, J. F. Chen, B. Liu, L. F. Liu, X. Y. Wang, Z. R. Yu, B. Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title_full | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title_fullStr | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title_full_unstemmed | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title_short | Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage |
| title_sort | oxide based rram a novel defect engineering based implementation for multilevel data storage |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97328 http://hdl.handle.net/10220/11838 |
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