Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resis...

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Bibliographic Details
Main Authors: Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/97328
http://hdl.handle.net/10220/11838

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