In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C
The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97334 http://hdl.handle.net/10220/10506 |
| _version_ | 1826117726567923712 |
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| author | Mangelinck, D. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Mangelinck, D. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun |
| author_sort | Mangelinck, D. |
| collection | NTU |
| description | The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides. |
| first_indexed | 2024-10-01T04:32:00Z |
| format | Journal Article |
| id | ntu-10356/97334 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:32:00Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973342020-03-07T14:02:47Z In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C Mangelinck, D. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides. 2013-06-20T03:21:27Z 2019-12-06T19:41:36Z 2013-06-20T03:21:27Z 2019-12-06T19:41:36Z 2003 2003 Journal Article Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., & Chan, L. (2003). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C. Solid State Communications, 128(9-10), 325-328. 0038-1098 https://hdl.handle.net/10356/97334 http://hdl.handle.net/10220/10506 10.1016/j.ssc.2003.09.004 en Solid state communications © 2003 Elsevier Ltd. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Mangelinck, D. Chan, L. Lee, Pooi See Pey, Kin Leong Ding, Jun In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title | In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title_full | In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title_fullStr | In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title_full_unstemmed | In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title_short | In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C |
| title_sort | in situ xrd analysis of ni pt si 100 reactions in low temperature regime ≤400°c |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97334 http://hdl.handle.net/10220/10506 |
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