A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation
We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good p...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 |
| _version_ | 1826121932827787264 |
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| author | Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| author_sort | Yuan, C. L. |
| collection | NTU |
| description | We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical. |
| first_indexed | 2024-10-01T05:40:34Z |
| format | Journal Article |
| id | ntu-10356/97343 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:40:34Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973432020-06-01T10:21:29Z A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical. 2013-06-19T03:34:58Z 2019-12-06T19:41:41Z 2013-06-19T03:34:58Z 2019-12-06T19:41:41Z 2006 2006 Journal Article Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation. Europhysics Letters (EPL), 74(1), 177-180. 0295-5075 https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 10.1209/epl/i2005-10505-4 en Europhysics letters (EPL) © 2006 EDP Sciences. |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title | A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_full | A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_fullStr | A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_full_unstemmed | A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_short | A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation |
| title_sort | simple approach to form ge nanocrystals embedded in amorphous lu2o3 high k gate dielectric by pulsed laser ablation |
| topic | DRNTU::Engineering::Materials::Nanostructured materials |
| url | https://hdl.handle.net/10356/97343 http://hdl.handle.net/10220/10483 |
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