Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experien...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97370 http://hdl.handle.net/10220/10745 |
| _version_ | 1811695450931068928 |
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| author | Zhou, Zhaofeng Sun, Changqing Yang, C. Li, J. W. Yang, X. X. Qin, W. Jiang, R. Guo, N. G. Wang, Y. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhou, Zhaofeng Sun, Changqing Yang, C. Li, J. W. Yang, X. X. Qin, W. Jiang, R. Guo, N. G. Wang, Y. |
| author_sort | Zhou, Zhaofeng |
| collection | NTU |
| description | With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order–length–strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect. |
| first_indexed | 2024-10-01T07:23:40Z |
| format | Journal Article |
| id | ntu-10356/97370 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:23:40Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/973702020-03-07T14:02:47Z Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency Zhou, Zhaofeng Sun, Changqing Yang, C. Li, J. W. Yang, X. X. Qin, W. Jiang, R. Guo, N. G. Wang, Y. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order–length–strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect. 2013-06-27T01:24:06Z 2019-12-06T19:41:56Z 2013-06-27T01:24:06Z 2019-12-06T19:41:56Z 2012 2012 Journal Article Yang, C., Zhou, Z. F., Li, J. W., Yang, X. X., Qin, W., Jiang, R., et al. (2012). Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency. Nanoscale, 4(4), 1304-1307. 2040-3364 https://hdl.handle.net/10356/97370 http://hdl.handle.net/10220/10745 10.1039/c2nr11605g en Nanoscale © 2012 The Royal Society of Chemistry. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhou, Zhaofeng Sun, Changqing Yang, C. Li, J. W. Yang, X. X. Qin, W. Jiang, R. Guo, N. G. Wang, Y. Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title | Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title_full | Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title_fullStr | Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title_full_unstemmed | Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title_short | Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency |
| title_sort | correlation between the band gap elastic modulus raman shift and melting point of cds zns and cdse semiconductors and their size dependency |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97370 http://hdl.handle.net/10220/10745 |
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