Phase evolution and room-temperature photoluminescence in amorphous SiC alloy
Amorphous SiC thin films with varying phases and compositions have been synthesized using a low frequency inductively coupled high density plasma source in a hydrogen diluted methane (CH4) and silane (SiH4) mixture. The optical and electrical properties along with the microstructures of the thin fil...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97431 http://hdl.handle.net/10220/12054 |
| _version_ | 1824454481713037312 |
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| author | Zhou, H. P. Xu, M. Wei, D. Y. Ong, T. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, S. |
| author2 | Institute of Advanced Studies |
| author_facet | Institute of Advanced Studies Zhou, H. P. Xu, M. Wei, D. Y. Ong, T. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, S. |
| author_sort | Zhou, H. P. |
| collection | NTU |
| description | Amorphous SiC thin films with varying phases and compositions have been synthesized using a low frequency inductively coupled high density plasma source in a hydrogen diluted methane (CH4) and silane (SiH4) mixture. The optical and electrical properties along with the microstructures of the thin films are systematically investigated. The feedstock gas ratio of CH4/SiH4 leads to the fluctuations of the optical bandgap, the carbon content, and the transition of Si–Si bonding structure from crystalline to intermediate phase and finally to amorphous phase. Room temperature photoluminescence (PL) with nearly fixed emission energy has been observed in the thin films. The underlying PL mechanism is explained in the framework of quantum confinement-luminescence center model. The photoexcitation process occurs in the nc-Si quantum dots embedded in the host SiC matrix, whereas the photoemission process occurs in the luminescence centers in the surrounding SiC or at SiC-Si interfaces. The PL evolution with the chemical composition in the films is analyzed in terms of the density of the Si quantum dots and the Si–C bond. |
| first_indexed | 2025-02-19T03:23:00Z |
| format | Journal Article |
| id | ntu-10356/97431 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:23:00Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/974312020-09-26T21:56:30Z Phase evolution and room-temperature photoluminescence in amorphous SiC alloy Zhou, H. P. Xu, M. Wei, D. Y. Ong, T. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, S. Institute of Advanced Studies DRNTU::Science::Physics Amorphous SiC thin films with varying phases and compositions have been synthesized using a low frequency inductively coupled high density plasma source in a hydrogen diluted methane (CH4) and silane (SiH4) mixture. The optical and electrical properties along with the microstructures of the thin films are systematically investigated. The feedstock gas ratio of CH4/SiH4 leads to the fluctuations of the optical bandgap, the carbon content, and the transition of Si–Si bonding structure from crystalline to intermediate phase and finally to amorphous phase. Room temperature photoluminescence (PL) with nearly fixed emission energy has been observed in the thin films. The underlying PL mechanism is explained in the framework of quantum confinement-luminescence center model. The photoexcitation process occurs in the nc-Si quantum dots embedded in the host SiC matrix, whereas the photoemission process occurs in the luminescence centers in the surrounding SiC or at SiC-Si interfaces. The PL evolution with the chemical composition in the films is analyzed in terms of the density of the Si quantum dots and the Si–C bond. Published version 2013-07-23T04:21:33Z 2019-12-06T19:42:44Z 2013-07-23T04:21:33Z 2019-12-06T19:42:44Z 2012 2012 Journal Article Zhou, H. P., Xu, M., Wei, D. Y., Ong, T., Xiao, S. Q., Xu, L. X., et al. (2012). Phase evolution and room-temperature photoluminescence in amorphous SiC alloy. Journal of Applied Physics, 111(10), 103526(1)-103526(7). 0021-8979 https://hdl.handle.net/10356/97431 http://hdl.handle.net/10220/12054 10.1063/1.4721412 en Journal of applied physics © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4721412. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Science::Physics Zhou, H. P. Xu, M. Wei, D. Y. Ong, T. Xiao, S. Q. Xu, L. X. Huang, S. Y. Guo, Y. N. Khan, S. Xu, S. Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title | Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title_full | Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title_fullStr | Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title_full_unstemmed | Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title_short | Phase evolution and room-temperature photoluminescence in amorphous SiC alloy |
| title_sort | phase evolution and room temperature photoluminescence in amorphous sic alloy |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/97431 http://hdl.handle.net/10220/12054 |
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