Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates
The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rar...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97482 http://hdl.handle.net/10220/10712 |
| _version_ | 1826127456790118400 |
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| author | Liu, Keng-Ku Zhang, Wenjing Lee, Yi-Hsien Lin, Yu-Chuan Chang, Mu-Tung Su, Ching-Yuan Chang, Chia-Seng Li, Hai Shi, Yumeng Zhang, Hua Lai, Chao-Sung Li, Lain-Jong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Liu, Keng-Ku Zhang, Wenjing Lee, Yi-Hsien Lin, Yu-Chuan Chang, Mu-Tung Su, Ching-Yuan Chang, Chia-Seng Li, Hai Shi, Yumeng Zhang, Hua Lai, Chao-Sung Li, Lain-Jong |
| author_sort | Liu, Keng-Ku |
| collection | NTU |
| description | The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers. |
| first_indexed | 2024-10-01T07:09:11Z |
| format | Journal Article |
| id | ntu-10356/97482 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:09:11Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/974822020-06-01T10:13:39Z Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates Liu, Keng-Ku Zhang, Wenjing Lee, Yi-Hsien Lin, Yu-Chuan Chang, Mu-Tung Su, Ching-Yuan Chang, Chia-Seng Li, Hai Shi, Yumeng Zhang, Hua Lai, Chao-Sung Li, Lain-Jong School of Materials Science & Engineering The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS2 layer is comparable with those of the micromechanically exfoliated thin sheets from MoS2 crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers. 2013-06-26T06:19:42Z 2019-12-06T19:43:11Z 2013-06-26T06:19:42Z 2019-12-06T19:43:11Z 2012 2012 Journal Article Liu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., et al. (2012). Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates. Nano Letters, 12(3), 1538-1544. 1530-6984 https://hdl.handle.net/10356/97482 http://hdl.handle.net/10220/10712 10.1021/nl2043612 en Nano letters © 2012 American Chemical Society. |
| spellingShingle | Liu, Keng-Ku Zhang, Wenjing Lee, Yi-Hsien Lin, Yu-Chuan Chang, Mu-Tung Su, Ching-Yuan Chang, Chia-Seng Li, Hai Shi, Yumeng Zhang, Hua Lai, Chao-Sung Li, Lain-Jong Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title_full | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title_fullStr | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title_full_unstemmed | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title_short | Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates |
| title_sort | growth of large area and highly crystalline mos2 thin layers on insulating substrates |
| url | https://hdl.handle.net/10356/97482 http://hdl.handle.net/10220/10712 |
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