Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/97897 http://hdl.handle.net/10220/11330 |
| _version_ | 1811694539974377472 |
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| author | Vaddi, Ramesh Pott, Vincent Chua, Geng Li Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Vaddi, Ramesh Pott, Vincent Chua, Geng Li Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung |
| author_sort | Vaddi, Ramesh |
| collection | NTU |
| description | This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates better scalability compared to conventional anchored NEM devices, which is desirable for circuit applications. The structure is electrostatically actuated and has low operating voltage. A novel memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented. |
| first_indexed | 2024-10-01T07:09:11Z |
| format | Journal Article |
| id | ntu-10356/97897 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:09:11Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/978972020-03-07T14:02:45Z Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device Vaddi, Ramesh Pott, Vincent Chua, Geng Li Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates better scalability compared to conventional anchored NEM devices, which is desirable for circuit applications. The structure is electrostatically actuated and has low operating voltage. A novel memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented. Accepted version 2013-07-12T06:31:05Z 2019-12-06T19:47:56Z 2013-07-12T06:31:05Z 2019-12-06T19:47:56Z 2012 2012 Journal Article https://hdl.handle.net/10356/97897 http://hdl.handle.net/10220/11330 10.1109/LED.2012.2206364 en IEEE electron device letters © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/LED.2012.2206364]. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Vaddi, Ramesh Pott, Vincent Chua, Geng Li Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title | Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title_full | Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title_fullStr | Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title_full_unstemmed | Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title_short | Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device |
| title_sort | design and scalability of a memory array utilizing anchor free nanoelectromechanical nonvolatile memory device |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/97897 http://hdl.handle.net/10220/11330 |
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