Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates...

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Bibliographic Details
Main Authors:	Vaddi, Ramesh, Pott, Vincent, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
Other Authors:	School of Electrical and Electronic Engineering
Format:	Journal Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/97897 http://hdl.handle.net/10220/11330

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