Probing near Dirac point electron-phonon interaction in graphene
Carrier dynamics in graphene films on CaF2 have been measured in the mid infrared region by femtosecond pump-probe spectroscopy. The relaxation kinetics shows two decay times. The fast time component is ~0.2 ps, which is attributed to the mixture of initial few ultrafast intraband and interband deca...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/97906 http://hdl.handle.net/10220/10932 |
| _version_ | 1826126995404095488 |
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| author | Gurzadyan, Gagik G. Shang, Jingzhi Yan, Suxia Cong, Chunxiao Tan, Howe-Siang Yu, Ting |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Gurzadyan, Gagik G. Shang, Jingzhi Yan, Suxia Cong, Chunxiao Tan, Howe-Siang Yu, Ting |
| author_sort | Gurzadyan, Gagik G. |
| collection | NTU |
| description | Carrier dynamics in graphene films on CaF2 have been measured in the mid infrared region by femtosecond pump-probe spectroscopy. The relaxation kinetics shows two decay times. The fast time component is ~0.2 ps, which is attributed to the mixture of initial few ultrafast intraband and interband decay channels. The slow component is ~1.5 ps, which is primarily assigned to optical phonon-acoustic phonon scattering. The contribution of fast component exhibits an increase trend in the probe photon frequencies from 2600 to 3100 cm−1. At the probe frequency of 2700 cm−1, the accelerated carrier relaxation was detected, which resulted from the interband triple-resonance electron-phonon scattering in graphene. At the probe frequency of 3175 cm−1, a clear instant negative differential transmission signal was observed, which is due to stimulated two-phonon emission involved with G phonons in graphene. This result indicates that graphene can be used as a source of coherent ultrashort sound-wave emission. |
| first_indexed | 2024-10-01T07:01:32Z |
| format | Journal Article |
| id | ntu-10356/97906 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:01:32Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/979062023-02-28T19:39:58Z Probing near Dirac point electron-phonon interaction in graphene Gurzadyan, Gagik G. Shang, Jingzhi Yan, Suxia Cong, Chunxiao Tan, Howe-Siang Yu, Ting School of Physical and Mathematical Sciences Carrier dynamics in graphene films on CaF2 have been measured in the mid infrared region by femtosecond pump-probe spectroscopy. The relaxation kinetics shows two decay times. The fast time component is ~0.2 ps, which is attributed to the mixture of initial few ultrafast intraband and interband decay channels. The slow component is ~1.5 ps, which is primarily assigned to optical phonon-acoustic phonon scattering. The contribution of fast component exhibits an increase trend in the probe photon frequencies from 2600 to 3100 cm−1. At the probe frequency of 2700 cm−1, the accelerated carrier relaxation was detected, which resulted from the interband triple-resonance electron-phonon scattering in graphene. At the probe frequency of 3175 cm−1, a clear instant negative differential transmission signal was observed, which is due to stimulated two-phonon emission involved with G phonons in graphene. This result indicates that graphene can be used as a source of coherent ultrashort sound-wave emission. Published version 2013-07-04T03:05:24Z 2019-12-06T19:48:09Z 2013-07-04T03:05:24Z 2019-12-06T19:48:09Z 2012 2012 Journal Article Shang, J., Yan, S., Cong, C., Tan, H.-S., Yu, T., & Gurzadyan, G. G. (2012). Probing near Dirac point electron-phonon interaction in graphene. Optical Materials Express, 2(12), 1713-1722. 2159-3930 https://hdl.handle.net/10356/97906 http://hdl.handle.net/10220/10932 10.1364/OME.2.001713 en Optical materials express © 2012 Optical Society of America. This paper was published in Optical Materials Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OME.2.001713]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Gurzadyan, Gagik G. Shang, Jingzhi Yan, Suxia Cong, Chunxiao Tan, Howe-Siang Yu, Ting Probing near Dirac point electron-phonon interaction in graphene |
| title | Probing near Dirac point electron-phonon interaction in graphene |
| title_full | Probing near Dirac point electron-phonon interaction in graphene |
| title_fullStr | Probing near Dirac point electron-phonon interaction in graphene |
| title_full_unstemmed | Probing near Dirac point electron-phonon interaction in graphene |
| title_short | Probing near Dirac point electron-phonon interaction in graphene |
| title_sort | probing near dirac point electron phonon interaction in graphene |
| url | https://hdl.handle.net/10356/97906 http://hdl.handle.net/10220/10932 |
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