PN-type quantum barrier for InGaN/GaN light emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the qu...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98017 http://hdl.handle.net/10220/12228 |
| _version_ | 1824456569438339072 |
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| author | Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Liu, Wei Ju, Zhengang Kyaw, Zabu Sun, Xiaowei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Liu, Wei Ju, Zhengang Kyaw, Zabu Sun, Xiaowei Demir, Hilmi Volkan |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. |
| first_indexed | 2025-02-19T03:56:11Z |
| format | Journal Article |
| id | ntu-10356/98017 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:56:11Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/980172023-02-28T19:40:33Z PN-type quantum barrier for InGaN/GaN light emitting diodes Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Liu, Wei Ju, Zhengang Kyaw, Zabu Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. Published version 2013-07-25T06:08:30Z 2019-12-06T19:49:37Z 2013-07-25T06:08:30Z 2019-12-06T19:49:37Z 2013 2013 Journal Article Zhang, Z.-H., Tan, S. T., Ji, Y., Liu, W., Ju, Z., Kyaw, Z., et al. (2013). PN-type quantum barrier for InGaN/GaN light emitting diodes. Optics express, 21(13). 1094-4087 https://hdl.handle.net/10356/98017 http://hdl.handle.net/10220/12228 10.1364/OE.21.015676 en Optics express © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.21.015676]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Liu, Wei Ju, Zhengang Kyaw, Zabu Sun, Xiaowei Demir, Hilmi Volkan PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title | PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title_full | PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title_fullStr | PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title_full_unstemmed | PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title_short | PN-type quantum barrier for InGaN/GaN light emitting diodes |
| title_sort | pn type quantum barrier for ingan gan light emitting diodes |
| url | https://hdl.handle.net/10356/98017 http://hdl.handle.net/10220/12228 |
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