Vandium dioxide active plasmonics
The insulator-metal transition (IMT) property of vanadium dioxide provides a large, abrupt change in refractive index, making it a good candidate active material for optical modulators. We show, in this paper, that plasmonic modulators can leverage the high modulation contrast of vanadium dioxide, w...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98101 http://hdl.handle.net/10220/12192 |
| _version_ | 1811691010682519552 |
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| author | Ooi, Kelvin J. A. Bai, Ping Chu, Hong Son Ang, Ricky Lay Kee |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ooi, Kelvin J. A. Bai, Ping Chu, Hong Son Ang, Ricky Lay Kee |
| author_sort | Ooi, Kelvin J. A. |
| collection | NTU |
| description | The insulator-metal transition (IMT) property of vanadium dioxide provides a large, abrupt change in refractive index, making it a good candidate active material for optical modulators. We show, in this paper, that plasmonic modulators can leverage the high modulation contrast of vanadium dioxide, while at the same time solve the problems of high insertion loss and high phase-transition electric-field threshold faced by vanadium dioxide photonic modulators. Our simulation results show that vanadium dioxide plasmonic slot and hybrid-slot waveguide modulators can achieve extinction ratios in excess of 10dB/μm with insertion losses as low as 2dB/μm. We also show that vanadium dioxide can be used to build plasmonic ring modulators. These high performance modulators are foundations to realizing plasmonic nanocircuits for next-generation chip technology. |
| first_indexed | 2024-10-01T06:13:06Z |
| format | Conference Paper |
| id | ntu-10356/98101 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:13:06Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/981012020-03-07T13:24:48Z Vandium dioxide active plasmonics Ooi, Kelvin J. A. Bai, Ping Chu, Hong Son Ang, Ricky Lay Kee School of Electrical and Electronic Engineering Photonics Global Conference (2012 : Singapore) DRNTU::Engineering::Electrical and electronic engineering The insulator-metal transition (IMT) property of vanadium dioxide provides a large, abrupt change in refractive index, making it a good candidate active material for optical modulators. We show, in this paper, that plasmonic modulators can leverage the high modulation contrast of vanadium dioxide, while at the same time solve the problems of high insertion loss and high phase-transition electric-field threshold faced by vanadium dioxide photonic modulators. Our simulation results show that vanadium dioxide plasmonic slot and hybrid-slot waveguide modulators can achieve extinction ratios in excess of 10dB/μm with insertion losses as low as 2dB/μm. We also show that vanadium dioxide can be used to build plasmonic ring modulators. These high performance modulators are foundations to realizing plasmonic nanocircuits for next-generation chip technology. 2013-07-25T04:03:54Z 2019-12-06T19:50:32Z 2013-07-25T04:03:54Z 2019-12-06T19:50:32Z 2012 2012 Conference Paper Ooi, K. J. A., Bai, P., Chu, H. S., & Ang, L. K. R. (2012). Vandium dioxide active plasmonics. 2012 Photonics Global Conference (PGC). https://hdl.handle.net/10356/98101 http://hdl.handle.net/10220/12192 10.1109/PGC.2012.6457923 en © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ooi, Kelvin J. A. Bai, Ping Chu, Hong Son Ang, Ricky Lay Kee Vandium dioxide active plasmonics |
| title | Vandium dioxide active plasmonics |
| title_full | Vandium dioxide active plasmonics |
| title_fullStr | Vandium dioxide active plasmonics |
| title_full_unstemmed | Vandium dioxide active plasmonics |
| title_short | Vandium dioxide active plasmonics |
| title_sort | vandium dioxide active plasmonics |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98101 http://hdl.handle.net/10220/12192 |
| work_keys_str_mv | AT ooikelvinja vandiumdioxideactiveplasmonics AT baiping vandiumdioxideactiveplasmonics AT chuhongson vandiumdioxideactiveplasmonics AT angrickylaykee vandiumdioxideactiveplasmonics |