Design of an electronic synapse with spike time dependent plasticity based on resistive memory device
This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98141 http://hdl.handle.net/10220/13303 |
| _version_ | 1811691512327569408 |
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| author | Hu, S. G. Wu, H. T. Liu, Y. Liu, Z. Yu, Q. Yin, Y. Chen, Tupei Hosaka, Sumio |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Hu, S. G. Wu, H. T. Liu, Y. Liu, Z. Yu, Q. Yin, Y. Chen, Tupei Hosaka, Sumio |
| author_sort | Hu, S. G. |
| collection | NTU |
| description | This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work according to the STDP rule, ensuring that the timing between pre and post-spikes leads to either the long term potentiation or long term depression. By using the synapse, a neural network with three neurons has been constructed to realize the STDP learning. |
| first_indexed | 2024-10-01T06:21:04Z |
| format | Journal Article |
| id | ntu-10356/98141 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:21:04Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/981412020-03-07T14:00:28Z Design of an electronic synapse with spike time dependent plasticity based on resistive memory device Hu, S. G. Wu, H. T. Liu, Y. Liu, Z. Yu, Q. Yin, Y. Chen, Tupei Hosaka, Sumio School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work according to the STDP rule, ensuring that the timing between pre and post-spikes leads to either the long term potentiation or long term depression. By using the synapse, a neural network with three neurons has been constructed to realize the STDP learning. Published version 2013-09-04T07:17:03Z 2019-12-06T19:51:16Z 2013-09-04T07:17:03Z 2019-12-06T19:51:16Z 2013 2013 Journal Article Hu, S. G., Wu, H. T., Liu, Y., Chen, T., Liu, Z., Yu, Q., Yin, Y., & Hosaka, S. (2013). Design of an electronic synapse with spike time dependent plasticity based on resistive memory device. Journal of Applied Physics, 113(11), 114502. 0021-8979 https://hdl.handle.net/10356/98141 http://hdl.handle.net/10220/13303 10.1063/1.4795280 en Journal of applied physics © 2013 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4795280]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Hu, S. G. Wu, H. T. Liu, Y. Liu, Z. Yu, Q. Yin, Y. Chen, Tupei Hosaka, Sumio Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title | Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title_full | Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title_fullStr | Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title_full_unstemmed | Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title_short | Design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| title_sort | design of an electronic synapse with spike time dependent plasticity based on resistive memory device |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98141 http://hdl.handle.net/10220/13303 |
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