Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention
As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model an...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98317 http://hdl.handle.net/10220/12366 |
| _version_ | 1826124758255665152 |
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| author | Wang, Yuhao Zhang, Chun Yu, Hao Zhang, Wei |
| author2 | School of Computer Engineering |
| author_facet | School of Computer Engineering Wang, Yuhao Zhang, Chun Yu, Hao Zhang, Wei |
| author_sort | Wang, Yuhao |
| collection | NTU |
| description | As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model and circuit-level characterization. It is then deployed as NVM component with a 3D hybrid integration of SRAM/DRAM, where one layer of CBRAM-crossbar is designed for data-retention under power gating to reduce leakage power from SRAM/DRAM at other layers. Moreover, a block-level data-retention scheme is designed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared to the hybrid memory using phase-change random access memory (PCRAM) as data-retention, our CBRAM-based hybrid memory achieves 16x faster migration time and 4x less migration power for hibernating transition. When compared to the FeRAM-based bit-wise data-retention, our approach also achieves 17x smaller area and 8x smaller power under the same data migration speed. |
| first_indexed | 2024-10-01T06:25:36Z |
| format | Conference Paper |
| id | ntu-10356/98317 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:25:36Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/983172020-05-28T07:17:30Z Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention Wang, Yuhao Zhang, Chun Yu, Hao Zhang, Wei School of Computer Engineering School of Electrical and Electronic Engineering International symposium on Low power electronics and design (2012) As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model and circuit-level characterization. It is then deployed as NVM component with a 3D hybrid integration of SRAM/DRAM, where one layer of CBRAM-crossbar is designed for data-retention under power gating to reduce leakage power from SRAM/DRAM at other layers. Moreover, a block-level data-retention scheme is designed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared to the hybrid memory using phase-change random access memory (PCRAM) as data-retention, our CBRAM-based hybrid memory achieves 16x faster migration time and 4x less migration power for hibernating transition. When compared to the FeRAM-based bit-wise data-retention, our approach also achieves 17x smaller area and 8x smaller power under the same data migration speed. 2013-07-26T04:06:04Z 2019-12-06T19:53:30Z 2013-07-26T04:06:04Z 2019-12-06T19:53:30Z 2012 2012 Conference Paper Wang, Y., Zhang, C., Yu, H., & Zhang, W. (2012). Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention. Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design (ISLPED). https://hdl.handle.net/10356/98317 http://hdl.handle.net/10220/12366 10.1145/2333660.2333709 en © 2012 ACM. |
| spellingShingle | Wang, Yuhao Zhang, Chun Yu, Hao Zhang, Wei Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title | Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title_full | Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title_fullStr | Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title_full_unstemmed | Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title_short | Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention |
| title_sort | design of low power 3d hybrid memory by non volatile cbram crossbar with block level data retention |
| url | https://hdl.handle.net/10356/98317 http://hdl.handle.net/10220/12366 |
| work_keys_str_mv | AT wangyuhao designoflowpower3dhybridmemorybynonvolatilecbramcrossbarwithblockleveldataretention AT zhangchun designoflowpower3dhybridmemorybynonvolatilecbramcrossbarwithblockleveldataretention AT yuhao designoflowpower3dhybridmemorybynonvolatilecbramcrossbarwithblockleveldataretention AT zhangwei designoflowpower3dhybridmemorybynonvolatilecbramcrossbarwithblockleveldataretention |