In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm,...
| Main Authors: | , , , , , , , , |
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| Format: | Conference Paper |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/98332 http://hdl.handle.net/10220/25663 |
| _version_ | 1826114741004664832 |
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| author | Teo, Khoon Leng Ng, Geok Ing Ranjan, Kumud Shoron, O. F. Arulkumaran, Subramaniam Rajan, S. Dolmanan, S. B. Manoj Kumar, Chandra Mohan Tripathy, S. |
| author2 | 2014 IEEE International Electron Devices Meeting (IEDM) |
| author_facet | 2014 IEEE International Electron Devices Meeting (IEDM) Teo, Khoon Leng Ng, Geok Ing Ranjan, Kumud Shoron, O. F. Arulkumaran, Subramaniam Rajan, S. Dolmanan, S. B. Manoj Kumar, Chandra Mohan Tripathy, S. |
| author_sort | Teo, Khoon Leng |
| collection | NTU |
| description | We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec at VD=0.5 V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28 mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT. |
| first_indexed | 2024-10-01T03:44:25Z |
| format | Conference Paper |
| id | ntu-10356/98332 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:44:25Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/983322020-03-07T12:47:14Z In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V Teo, Khoon Leng Ng, Geok Ing Ranjan, Kumud Shoron, O. F. Arulkumaran, Subramaniam Rajan, S. Dolmanan, S. B. Manoj Kumar, Chandra Mohan Tripathy, S. 2014 IEEE International Electron Devices Meeting (IEDM) Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering::Semiconductors We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec at VD=0.5 V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28 mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT. 2015-05-25T03:23:50Z 2019-12-06T19:53:38Z 2015-05-25T03:23:50Z 2019-12-06T19:53:38Z 2014 2014 Conference Paper Arulkumaran, S., Ng, G.I., Manoj Kumar, C.M., Ranjan, K., Teo, K.L., Shoron, O. F., et al. (2014). In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V. 2014 IEEE International Electron Devices Meeting (IEDM), 25.6.1-25.6.4. https://hdl.handle.net/10356/98332 http://hdl.handle.net/10220/25663 10.1109/IEDM.2014.7047109 en ©2014 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Teo, Khoon Leng Ng, Geok Ing Ranjan, Kumud Shoron, O. F. Arulkumaran, Subramaniam Rajan, S. Dolmanan, S. B. Manoj Kumar, Chandra Mohan Tripathy, S. In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title_full | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title_fullStr | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title_full_unstemmed | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title_short | In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V |
| title_sort | in0 17al0 83n aln gan triple t shape fin hemts with gm 646 ms mm ion 1 03a mm ioff 1 13 μa mm ss 82 mv dec and dibl 28 mv v at vd 0 5 v |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/98332 http://hdl.handle.net/10220/25663 |
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