Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells
The difference in refractive indices of glass substrate and transparent conducting oxide (TCO) electrode causes optical reflection in thin film solar cells, which results in lower absorption of light for devices. An anti-reflection layer between glass and TCO is required to reduce the loss of light...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/98352 http://hdl.handle.net/10220/18427 |
| _version_ | 1811696600909611008 |
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| author | Singh, Chandra Bhal Bhattacharya, Sekhar Singh, Vandana Bhargav, P. Balaji Sarkar, Surajit Bhavanasi, Venkateswarlu Ahmad, Nafis |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Singh, Chandra Bhal Bhattacharya, Sekhar Singh, Vandana Bhargav, P. Balaji Sarkar, Surajit Bhavanasi, Venkateswarlu Ahmad, Nafis |
| author_sort | Singh, Chandra Bhal |
| collection | NTU |
| description | The difference in refractive indices of glass substrate and transparent conducting oxide (TCO) electrode causes optical reflection in thin film solar cells, which results in lower absorption of light for devices. An anti-reflection layer between glass and TCO is required to reduce the loss of light due to optical reflection. Silicon nitride (SixNy:Hz) films have shown antireflection property. The refractive index of SixNy:Hz films can be engineered by changing the silicon or nitrogen content in the film. Here, we report the optimization of refractive index of SixNy:Hz to achieve a value between refractive index of glass (1.5) and TCO film (2.0). SixNy:Hz films have been deposited in a RF-plasma enhanced chemical vapour deposition system operating at a frequency of 13.56 MHz. The substrate temperature was fixed at 300 °C. Fourier transform infrared analysis has been used to determine the nature of Si-N, N-H, and Si-H bonding in the films. Refractive index of films has been measured using spectroscopic ellipsometer. The optical reflectance and transmission of SixNy:Hz and SixNy:Hz/TCO layers have been measured using UV/VIS spectrometer. The gas flow rate ratio of N2/SiH4 has been varied from 235 to 470. Decrease in transmittance of SixNy:Hz/TCO layer is observed with increase in silicon concentration in the film. Refractive index of SixNy:Hz also increased with an increase of the silicon content in the films. The reflectance of TCO films has been decreased from 15% to 8% when SixNy:Hz film is incorporated between glass substrate and TCO film. An improvement of around 20% has been observed in current density of solar cells having SixNy:Hz film as refractive index matching layer with refractive index 1.83. Thus, SixNy:Hz film as refractive index matching layer can be used to improve the solar cells device efficiency. |
| first_indexed | 2024-10-01T07:41:57Z |
| format | Journal Article |
| id | ntu-10356/98352 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:41:57Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/983522023-07-14T15:54:38Z Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells Singh, Chandra Bhal Bhattacharya, Sekhar Singh, Vandana Bhargav, P. Balaji Sarkar, Surajit Bhavanasi, Venkateswarlu Ahmad, Nafis School of Materials Science & Engineering DRNTU::Engineering::Materials The difference in refractive indices of glass substrate and transparent conducting oxide (TCO) electrode causes optical reflection in thin film solar cells, which results in lower absorption of light for devices. An anti-reflection layer between glass and TCO is required to reduce the loss of light due to optical reflection. Silicon nitride (SixNy:Hz) films have shown antireflection property. The refractive index of SixNy:Hz films can be engineered by changing the silicon or nitrogen content in the film. Here, we report the optimization of refractive index of SixNy:Hz to achieve a value between refractive index of glass (1.5) and TCO film (2.0). SixNy:Hz films have been deposited in a RF-plasma enhanced chemical vapour deposition system operating at a frequency of 13.56 MHz. The substrate temperature was fixed at 300 °C. Fourier transform infrared analysis has been used to determine the nature of Si-N, N-H, and Si-H bonding in the films. Refractive index of films has been measured using spectroscopic ellipsometer. The optical reflectance and transmission of SixNy:Hz and SixNy:Hz/TCO layers have been measured using UV/VIS spectrometer. The gas flow rate ratio of N2/SiH4 has been varied from 235 to 470. Decrease in transmittance of SixNy:Hz/TCO layer is observed with increase in silicon concentration in the film. Refractive index of SixNy:Hz also increased with an increase of the silicon content in the films. The reflectance of TCO films has been decreased from 15% to 8% when SixNy:Hz film is incorporated between glass substrate and TCO film. An improvement of around 20% has been observed in current density of solar cells having SixNy:Hz film as refractive index matching layer with refractive index 1.83. Thus, SixNy:Hz film as refractive index matching layer can be used to improve the solar cells device efficiency. Published version 2014-01-10T02:42:26Z 2019-12-06T19:53:57Z 2014-01-10T02:42:26Z 2019-12-06T19:53:57Z 2013 2013 Journal Article Singh, C. B., Bhattacharya, S., Singh, V., Bhargav, P. B., Sarkar, S., Bhavanasi, V., et al. (2013). Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells. Journal of renewable and sustainable energy, 5(3), 031605-. 1941-7012 https://hdl.handle.net/10356/98352 http://hdl.handle.net/10220/18427 10.1063/1.4807609 en Journal of renewable and sustainable energy © 2013 AIP Publishing LLC. This paper was published in Journal of Renewable and Sustainable Energy and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4807609]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials Singh, Chandra Bhal Bhattacharya, Sekhar Singh, Vandana Bhargav, P. Balaji Sarkar, Surajit Bhavanasi, Venkateswarlu Ahmad, Nafis Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title | Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title_full | Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title_fullStr | Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title_full_unstemmed | Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title_short | Application of SixNy:Hz (SiN) as index matching layer in a-Si:H thin film solar cells |
| title_sort | application of sixny hz sin as index matching layer in a si h thin film solar cells |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/98352 http://hdl.handle.net/10220/18427 |
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