Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching
We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98448 http://hdl.handle.net/10220/11336 |
| _version_ | 1826115636269416448 |
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| author | Raghavan, Nagarajan Pey, Kin Leong Wu, Xing Liu, Wenhu Bosman, Michel |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Raghavan, Nagarajan Pey, Kin Leong Wu, Xing Liu, Wenhu Bosman, Michel |
| author_sort | Raghavan, Nagarajan |
| collection | NTU |
| description | We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented. |
| first_indexed | 2024-10-01T03:58:22Z |
| format | Journal Article |
| id | ntu-10356/98448 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:58:22Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/984482020-03-07T14:00:30Z Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching Raghavan, Nagarajan Pey, Kin Leong Wu, Xing Liu, Wenhu Bosman, Michel School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented. 2013-07-12T07:43:09Z 2019-12-06T19:55:21Z 2013-07-12T07:43:09Z 2019-12-06T19:55:21Z 2012 2012 Journal Article https://hdl.handle.net/10356/98448 http://hdl.handle.net/10220/11336 10.1109/LED.2012.2187170 en IEEE electron device letters © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Raghavan, Nagarajan Pey, Kin Leong Wu, Xing Liu, Wenhu Bosman, Michel Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title_full | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title_fullStr | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title_full_unstemmed | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title_short | Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching |
| title_sort | percolative model and thermodynamic analysis of oxygen ion mediated resistive switching |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/98448 http://hdl.handle.net/10220/11336 |
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