Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors
Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtain...
Main Authors: | Ding, Zhihao, Hu, Guangxi, Liu, Ran, Wang, Lingli, Hu, Shuyan, Zhou, Xing |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98589 http://hdl.handle.net/10220/17701 |
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